FDMC86102LZ
FDMC86102LZ is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance. G- S zener has been added to enhance ESD voltage level.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 24 m W at VGS = 10 V, ID = 6.5 A
- Max RDS(on) = 35 m W at VGS = 4.5 V, ID = 5.5 A
- HBM ESD Protection Level > 6 k V Typical (Note 4)
- 100% UIL Tested
- Ro HS pliant
Applications
- DC- DC Switching
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Ratings Unit
VDS Drain- to- Source Voltage
VGS Gate- to- Source Voltage
±20
ID Drain Current
- Continuous
TC = 25°C
- Continuous
TA = 25°C
(Note 1a)
- Pulsed
EAS Single Pulse Avalanche Energy (Note 3)
84 m J
PD Power Dissipation
TC = 25°C
Power Dissipation (Note 1a)
TA = 25°C
TJ, TSTG Operating and Storage Junction Temperature...
