FDMC86102LZ datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Shielded Gate MOSFET Technology
* Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A
* Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A
* HBM ESD Protection Le.

Application

* DC−DC Switching MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drai.

Description

This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S z.

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